Consider an sol NMOS device with an N+ poly-gate, a channel length of , a channel width of , a front gate oxide of a buried oxide of lJLm, and a silicon thin-film thickness of doped with a p-type density of 8 x 1016cm-3. Other parameters are as listed in Sec. 5.6. (a) Before the onset of the kink effect, what is the threshold voltage? (b) At VGS = 1.5V and 3V, compute VDS at the onset of the kink effect. (c) As in (b), at VDS = 6V, compute the corresponding threshold voltages. (d) If the silicon thin-film doping density is changed to 1017 cm-3 and 5 x1016cm-3, repeat (a)-(c). (e) If the device is stressed to generate a large amount of interface traps such that all the related lifetimes become O.lx, repeat (a)-(d).