For an Sol NMOS device as shown in Fig. 4.3, the gate oxide is 50A. The channel length is O.ll1m. The doping density of the p-type silicon thin-film is 1018cm-3. The thickness of the silicon thin-film is 500A. The buried oxide is 3000A. (a) Calculate the threshold voltage without considering the short channel effect. (b) Calculate the body effect coefficient. (c) Calculate the sub threshold slope in terms of m V / decade. (d) Calculate the short-channel effect threshold voltage. (e) If the thickness of the sidewall oxide is 100A, calculate the narrow channel effect threshold voltage if the channel width is 0.2I1m.