Consider the single-gate Sol NMOS device as shown in Fig. 4.22. (a) If the channel width is 10p,m, compute the change in the threshold voltage when the channel length is scaled down from . (b) If the channel width is changed to , compute the change in the threshold voltage as in (a). (c) Based on (a) and (b), when the channel width is scaled down, discuss the effect on the short channel effect. (d) If the silicon thin-film thickness becomes repeat (a)-(c). Discuss the effect on the short channel and narrow channel effects when the silicon thin film thickness becomes smaller.